首先我道歉,十几年没翻化学书了,不小心把碳元素说成活泼元素,但是反对楼主的观点依旧不变,不要看了几篇媒体沸腾文就觉得马上要弯道超车了,涡扇15这么多年没量产是有原因的,凭什么人家认认真真搞了几十年的研究被你随随便便超过,反对我的自己直接去看北大论文的原文,人家也承认还有挑战
网页链接However, CNT FETs with real performance exceeding that of Si CMOS FETs have not been realized at similar technology nodes because CNT materials available for research are still far from ideal for electronics. As a building block for high-performance digital electronics, the extremely scaled CNT FET (with a channel width of several tens of nanometers;Fig. 1A) should contain multiple semiconducting CNTs in the channel to provide sufficient driving ability (2–6). A high-density aligned semiconducting CNT array is required as the channel material for fabricating large-scale ICs. The ideal material system is well established to be aligned CNT (A-CNT) arrays with a well-defined and consistent 5- to 10-nm pitch (100 to 200 CNTs/μm), a semiconducting purity estimated to be >99.9999%, and a narrow diameter distribution around 1.5 nm