氮化镓技术因其在低功耗、小尺寸等特性设计上的独特优势和成熟规模化的生产能力，近年来在功率器件市场大受欢迎。在前不久举办的EEVIA第五届ICT技术趋势论坛上，这个主题受到国内媒体的集体“围观”。将富士通电子旗下代理产品线Transphorm公司独特GaN技术和产品方案第一次带到中国媒体面前，采用创新的Cascode结构的HEMT高压产品让Transphorm在氮化镓功率表技术领域剑走偏锋，成为该阵营的领头羊。
氮化镓相关器件有:
型号 封装 电压 电流
TPH3002LDPQFN8860090.29GaN HEMT,常断, 漏极标签
TPH3002LSPQFN8860090.29GaN HEMT, 常断, 源极标签
TPH3002PDTO-22060090.29GaN HEMT, 常断, 漏极标签
TPH3002PSTO-22060090.29GaN HEMT, 常断, 源极标签
TPH3006LDPQFN88600170.15GaN HEMT, 常断, 漏极标签
TPH3006LSPQFN88600170.15GaN HEMT, 常断, 源极标签
TPH3006PDTO-220600170.15GaN HEMT, 常断, 漏极标签
TPH3006PSTO-220600170.15GaN HEMT, 常断, 源极标签
TPH3202LDPQFN8860090.29GaN HEMT, 常断, 漏极标签
TPH3202LSPQFN8860090.29GaN HEMT, 常断, 源极标签
TPH3202PDTO-22060090.29GaN HEMT, 常断, 漏极标签
TPH3202PSTO-22060090.29GaN HEMT, 常断, 源极标签
TPH3205WSTO-247600340.063GaN HEMT, 常断, 源极标签
TPH3206LDPQFN88600170.15GaN HEMT, 常断, 漏极标签
TPH3206LSPQFN88600170.15GaN HEMT, 常断, 源极标签
TPH3206PDTO-220600170.13GaN HEMT, 常断, 漏极标签
TPH3208PSTO-220650170.13GaN HEMT, 常断, 源极标签
TPH3208PDPQFN88650170.13GaN HEMT, 常断, 漏极标签
TPH3208LSPQFN88650170.13GaN HEMT, 常断, 源极标签
TPH3208LDGPQFN88650170.13GaN HEMT, 常断, 漏极标签
TPH3212PSTO-220650170.13GaN HEMT, 常断, 源极标签
TPH3207WSTO-247650170.13GaN HEMT, 常断, 漏极标签
TPD3215MTO-220650170.34GaN HEMT, 常断, 源极标签